advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 105v low on-resistance r ds(on) 15m fast switching characteristic i d 65a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 0.9 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change without notice 200817071-1/4 AP75T10AGP rohs-compliant product parameter rating drain-source voltage 105 gate-source voltage 20 continuous drain current, v gs @ 10v 65 continuous drain current, v gs @ 10v 41 pulsed drain current 1 260 total power dissipation 138 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 1.11 thermal data parameter storage temperature range g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial- industrial through hole applications and suited for low voltage applications such as dc/dc converters. g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 105 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 29.3 - s i dss drain-source leakage current (t j =25 o c) v ds =100v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =80v ,v gs =0v - - 100 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =30a - 63 101 nc q gs gate-source charge v ds =80v - 9 - nc q gd gate-drain ("miller") charge v gs =10v - 30 - nc t d(on) turn-on delay time 2 v ds =50v - 18 - ns t r rise time i d =30a - 74 - ns t d(off) turn-off delay time r g =10 ? v gs =10v - 65 - ns t f fall time r d =1.6 - 104 - ns c iss input capacitance v gs =0v - 2800 4480 pf c oss output capacitance v ds =25v - 550 - pf c rss reverse transfer capacitance f=1.0mhz - 250 - pf r g gate resistance f=1.0mhz - 1.2 1.8 ?
ap75t10ag p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 50 100 150 200 250 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5v v g = 4 .0v 0 20 40 60 80 100 120 012345 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g = 4 .0v t c = 150 o c 10 14 18 22 26 30 34 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =16a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP75T10AGP 0 2 4 6 8 10 12 14 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =64v v ds =80v i d =30a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.6 3.10 3.6 l4 14.70 15.50 16 l5 6.30 6.50 6.70 3.50 3.60 3.70 d 8.40 8.90 9.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 symbols advanced power electronics corp. e b b1 e d l3 l4 l1 l2 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss se q uence 75t10agp ywwsss logo l5 e1 meet rohs requirement
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